vishay general semiconductor uh20fct& uhb20fct document number 88964 10-nov-06 www.vishay.com 1 new product dual common-cathode ultrafast recovery rectifier features ? oxide planar chip junction ? ultrafast recovery times ? soft recovery characteristics ? low switching losses, high efficiency ? high forward surge capability ? meets msl level 1, per j-std-020c, lf max peak of 245 c (for to-263ab package) ? solder dip 260 c, 40 seconds (for to-220ab package) ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency power factor correctors, switching mode power supplies, free-wheeling diodes and secondary dc-to-dc rectification application. mechanical data case: to-220ab & to-263ab epoxy meets ul 94v- 0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked mounting torque: 10 in-lbs maximum to-220ab 1 2 3 to-263ab 1 2 k case pin 2 pin 1 pin 3 uh20fct k heatsink pin 1 pin 2 uhb20fct major ratings and characteristics i f(av) 10 a x 2 v rrm 300 v i fsm 180 a t rr 25 ns v f 0.83 v t j max 175 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol uh20fct uhb20fct unit maximum repetitive peak reverse voltage v rrm 300 v maximum average forward rectified current (see fig.1) per device per diode i f(av) 20 10 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 180 a operating junction and storage temperature range t j , t stg - 55 to + 175 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage per diode (1) at i f = 5.0 a, i f = 5.0 a, t j = 25 c t j = 125 c v f 0.96 0.77 - - v at i f = 10 a, i f = 10 a, t j = 25 c t j = 125 c 1.0 0.83 1.2 0.90 maximum reverse current per diode (1) at v r = 300 v t j = 25 c t j = 125 c i r 0.5 25 5 150 a
www.vishay.com 2 document number 88964 10-nov-06 vishay general semiconductor uh20fct& uhb20fct note: (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) maximum reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 20 25 ns maximum reverse recovery time per diode at i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm t rr 28 35 ns typical softness factor (tb/ta) at i f = 10 a, di/dt = 200 a/s, v r = 200 v, t j = 125 c per diode s0.36 - - typical reverse recovery current i rm 7.0 - a typical stored charge q rr 160 - nc typical forward recovery time per diode at i f = 10 a, di/dt = 80 a/s, v fr = 1.1 x v fmax t fr 150 - ns electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol uh20fct uhb20fct unit typical thermal resistance per diode r jc 2.0 2.0 c/w ordering information package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab uh20fct-e3/4w 1.88 4w 50/tube tube to-263ab uhb20fct-e3/4w 1.38 4w 50/tube tube to-263ab uhb20fct-e3/8w 1.38 8w 800/reel tape & reel figure 1. maximum forward current derating curve 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 case temperat u re (c) a v erage for w ard rectified c u rrent (a) figure 2. forward power loss characteristics per diode 0 1 2 3 4 5 6 7 8 9 10 11 12 02 46 8 10 12 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = 0.2 d = 0.1 t d - tp/t tp
document number 88964 10-nov-06 www.vishay.com 3 uh20fct& uhb20fct vishay general semiconductor figure 3. maximum non-repetitive peak forward surge current per diode figure 4. typical instantaneous forw ard characteristics per diode 20 40 60 8 0 100 120 140 160 1 8 0 200 1 10 100 nu m b er of cycles peak for w ard s u rge c u rrent (a) t j = t j max. 10 ms single half sine- w a v e 0.1 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 125 c t j = 175 c t j = 25 c figure 5. typical reverse leakage characteristics per diode figure 6. typical junction capacitance per diode 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t j = 125 c t j = 175 c t j = 25 c 1 10 100 1000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v stg = 50 m v p-p
www.vishay.com 4 document number 88964 10-nov-06 vishay general semiconductor uh20fct& uhb20fct package outline dimensions in inches (millimeters) t o-220ab 1 3 pi n 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) 0.154 (3.91) 0.14 8 (3.74) 0.113 (2. 8 7) 0.103 (2.62) 0.160 (4.06) 0.140 (3.56) 0.635 (16.13) 0.625 (15. 8 7) 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.02 8 (0.70) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) 0.057 (1.45) 0.045 (1.14) 2 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.3 8 0 (9.65) 0.41 1 (10.45) 0.320 ( 8 .13) 0.360 (9.14) 0.591(15.00) 0.624 (15. 8 5) 1 2 0.245 (6.22) mi n k k 0.160 (4.06) 0.190 (4. 8 3) 0.045 (1.14) 0.055 (1.40) 0.014 (0.36) 0.021 (0.53) 0.110 (2.79) 0.140 (3.56) 0.110 (2.79) 0.090 (2.29) 0.047 (1.19) 0.055 (1.40) 0-0.01 (0-0.254) 0.027 (0.6 8 6) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) to-263ab 0.105 (2.67) 0.0 8 (0.095) (2.41) (2.032) 0.42 (10.66) 0.670 (17.02) 0.591 (15.00) 0.15 (3. 8 1) 0.33 ( 8 .3 8 ) mountin g pad layout mi n . mi n . mi n . mi n .
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